ZXMN2AM832

OBSOLETE - PLEASE USE ZXMN2AMCTA ZXMN2AM832 MPPS™ Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count 3x2mm Dual Die MLP FEATURES Low On - Resistance Fast switching speed Low threshold Low gate drive 3mm x 2mm MLP APPLICATIONS DC-DC Converters Power Management Functions Disconnection switches Motor Control PINOUT 7 ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMN2AM832TA 7’‘ 8mm ZXMN2AM832TC 13’‘ 8mm QUANTITY PER REEL 3000 units 10000 units DEVICE MARKING DNA 3mm x 2mm Dual MLP underside view ISSUE 3 - JANUARY 2005 1 SEMICONDUCTORS OBSOLETE - PLEASE USE ZXMN2AMCTA ZXMN2AM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL N-Channel UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V; TA=25ЊC (b) (f) @VGS=10V; TA=70ЊC (b) (f) @VGS=10V; TA=25ЊC (a) (f) Pulsed Drain Current Continuous Source Current (Body Diode) (b) (f) P...