ZXMN2F30FHTA

ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS 20 RDS(on) (Ω) 0.045 @ VGS= 4.5V 0.065 @ VGS= 2.5V ID (A) 4.9 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. Features Low on-resistance 2.5V gate drive capability SOT23 package Applications Buck/Boost DC-DC Converters Load switching and SMPS Charging applications in portable equipment Motor Control LED Lighting D G S Ordering information DEVICE ZXMN2F30FHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 D S Device marking KNC G Top view Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN2F30FH Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ VGS=4.5; TA=25°C(b) @ VGS=4.5; TA=70°C(b) @ VGS=4.5; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD Tj, Tstg Limit 20 ±12 4.9 4.0 4.1 22.6 1.6 22.6 0.96 7.6 1.4 11.2 -55 to 150 Unit V V A A A A A A W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to Lead(d) Symbol R⍜JA R⍜JA R⍜JL Limit 131 89 68 Unit °C/W °C/W °C/W NOTES: (a) For a device surface mount...