Document
PD - 95149
IRL2910S/LPbF
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application. The through-hole version (IRL2910L) is available for low-
AprobfsileoalupptleicaMtioanxs.imum Ratings
G
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.026Ω ID = 55A
S
D 2 Pak
T O -26 2
Max. 55 39 190 3.8 200 1.3 ± 16 520 29 20 5.0
-55 to + 175
300 (1.6mm from case )
Typ. ––– –––
Max. 0.75 40
Units
A
W W W/°C V mJ A mJ V/ns
°C
Units °C/W
04/19/04
IRL2910S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
LS
Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Internal Source Inductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 100 ––– ––– ––– ––– 1.0 28 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
–––
––– ––– –––
Typ. Max. ––– ––– 0.12 ––– ––– 0.026 ––– 0.030 ––– 0.040 ––– 2.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 ––– 140 ––– 20 ––– 81 11 ––– 100 ––– 49 ––– 55 –––
7.5 –––
3700 ––– 630 ––– 330 –––
Units V
V/°C Ω V S µA nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA
VGS = 1.