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N0412N Dataheets PDF



Part Number N0412N
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL MOSFET
Datasheet N0412N DatasheetN0412N Datasheet (PDF)

N0412N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 Description The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0412N-S19-AY ∗1 Lead Plating Pure Sn (Tin) Packing T.

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N0412N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 Description The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0412N-S19-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-220 1.9 g TYP. Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 40 ±20 ±100 ±400 119 1.5 150 −55 to +150 55 300 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance Rth(ch-C) Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) 1.05 83.3 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 μH R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 Page 1 of 6 N0412N Chapter Title Electrical Characteristics (TA = 25°C, all terminals are connected) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Symbol IDSS IGSS VGS(off) | yfs | RDS(on) MIN. 2.0 26 TYP. 2.7 MAX. 1 ±100 4.0 3.7 Unit μA nA V S mΩ Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 A VGS = 10 V, ID = 50 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: ∗1. Pulsed Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 5550 580 320 29.0 15.0 64.0 13.0 100 26 32 40 44 1.5 pF VDS = 25 V, pF VGS = 0 V, pF f = 1 MHz ns VDD = 20 V, ID = 50 A, ns VGS = 10 V, ns RG = 0 Ω ns nC VDD = 32 V, nC VGS = 10 V, nC ID = 100 A V IF = 100 A, VGS = 0 V ns IF = 50 A, VGS = 0 V, nC di/dt = 100 A/μ s TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD BVDSS ID VDD IAS VDS Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. RG PG. VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% RL VDD VGS VGS Wave Form 10% 0 VDS 90% VDS VDS Wave Form 0 td(on) VGS 90% 90% 10% 10% tr td(off) tf ton toff D.U.T. IG = 2 mA PG. 50 Ω RL VDD R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 Page 2 of 6 N0412N Chapter Title dT - Percentage of Rated Power - % Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 1000 RDS(on) Limited 100 10 PW = 300 µs 1 ms 10 ms Power Dissipation Limited 1 TC = 25°C 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C 1000 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Single pulse Rth(ch-A) = 83.3°C/W rth(t) - Transient Thermal Resistance - °C/W 10 Rth(ch-C) = 1.05°C/W 1 0.1 0.01 0.1 m 1m 10 m 100 m 1 10 PW - Pulse Width - s 100 1000 R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 Page 3 of 6 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate to Source Cut-off Voltage - V ID - Drain Current - A N0412N 450 400 350 300 250 200 150 100 50 0 0 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V Pulsed 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5 3 2.5 2 1.5 1 VDS = 10 V 0.5 ID = 1.0 mA 0 -50 0 50 100 150 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 5 4 VGS = 10 V 3 2 1 Pulsed 0 1 10 100 ID - Drain Current - A 1000 R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S ID - Drain Current - A Chapter Title FORWARD TRANSFER CHARACTERISTICS 100 TA = 125°C 10 75°C 25°C 1 −25°C 0.1 0.01 VDS = 10 V Pulsed 0.001 012345 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 TA = 125°C 75°C 10 25°C -25°C 1 0.1 0.01 0.01 VDS = 10 V Pulsed 0.1 1 10 ID - Drain Current - A 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 35 ID = 50 A Pulsed.


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