Document
N0412N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0554EJ0100 Rev.1.00
Nov 07, 2011
Description
The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current ID(DC) = ±100 A
• RoHS Compliant
Ordering Information
Part No. N0412N-S19-AY ∗1
Lead Plating Pure Sn (Tin)
Packing Tube 50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package TO-220 1.9 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature
Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS
Ratings 40 ±20
±100 ±400 119 1.5 150 −55 to +150
55 300
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
1.05 83.3
°C/W °C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 μH
R07DS0554EJ0100 Rev.1.00 Nov 07, 2011
Page 1 of 6
N0412N
Chapter Title
Electrical Characteristics (TA = 25°C, all terminals are connected)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1
Drain to Source On-state Resistance ∗1
Symbol IDSS IGSS VGS(off) | yfs | RDS(on)
MIN.
2.0 26
TYP. 2.7
MAX. 1
±100 4.0
3.7
Unit μA nA V S mΩ
Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 A VGS = 10 V, ID = 50 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: ∗1. Pulsed
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
5550 580 320 29.0 15.0 64.0 13.0 100 26 32
40 44
1.5
pF VDS = 25 V, pF VGS = 0 V, pF f = 1 MHz
ns VDD = 20 V, ID = 50 A, ns VGS = 10 V, ns RG = 0 Ω ns nC VDD = 32 V, nC VGS = 10 V, nC ID = 100 A V IF = 100 A, VGS = 0 V ns IF = 50 A, VGS = 0 V, nC di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
BVDSS
ID VDD
IAS
VDS
Starting Tch TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG PG.
VGS 0
τ
τ = 1 μs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
10% 0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off) tf
ton toff
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
R07DS0554EJ0100 Rev.1.00 Nov 07, 2011
Page 2 of 6
N0412N
Chapter Title
dT - Percentage of Rated Power - %
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 120 100 80 60 40 20 0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
1000 RDS(on) Limited
100
10
PW = 300 µs 1 ms
10 ms
Power Dissipation Limited 1
TC = 25°C 0.1
0.1 1
10 100
VDS - Drain to Source Voltage - V
PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Rth(ch-A) = 83.3°C/W
rth(t) - Transient Thermal Resistance - °C/W
10
Rth(ch-C) = 1.05°C/W 1
0.1
0.01
0.1 m
1m
10 m
100 m
1
10
PW - Pulse Width - s
100 1000
R07DS0554EJ0100 Rev.1.00 Nov 07, 2011
Page 3 of 6
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(off) - Gate to Source Cut-off Voltage - V
ID - Drain Current - A
N0412N
450 400 350 300 250 200 150 100
50 0 0
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5
3
2.5
2
1.5
1 VDS = 10 V
0.5 ID = 1.0 mA 0 -50 0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
5
4 VGS = 10 V
3
2
1 Pulsed
0 1
10
100
ID - Drain Current - A
1000
R07DS0554EJ0100 Rev.1.00 Nov 07, 2011
RDS(on) - Drain to Source On-state Resistance - mΩ
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
TA = 125°C 10 75°C
25°C 1 −25°C
0.1
0.01
VDS = 10 V Pulsed
0.001
012345
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100
TA = 125°C 75°C
10 25°C -25°C
1
0.1
0.01 0.01
VDS = 10 V Pulsed
0.1 1 10 ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 35 ID = 50 A
Pulsed.