SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-126 package ·DARLINGTON ·...
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage
APPLICATIONS ·For use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2) PIN DESCRIPTION
1 Emitter
2
Collector;connected to mounting base
3 Base
Product Specification
2SB1149
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO
Collector-base voltage Collector-emitter voltage
Open emitter Open base
VEBO IC ICM
Emitter-base voltage Collector current (DC) Collector current-peak
PD Total power dissipation
Open collector
Ta=25 TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE -100 -100 -8 -3.0 -5.0 1.3 15 150
-55~150
UNIT V V V A A
W
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
Product Specification
2SB1149
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA
VBEsat
Base-emitter saturation voltage
IC=-1.5A ;IB=-1.5mA
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1.5A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
Switching times
-0.9 -1.2
V
-1.5 -2.0
V
-10 µA
-2.0 mA
2000
15000
1000
ton Turn-on time tstg Storage time tf Fall time
IC=-1.5A ; IB1=-IB2=-1.5mA VCC?-40V;RL=27B
0.5 µs 2.0 µs 1.0 µs
...