Power Transistors
2SB1255
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1895...
Power
Transistors
2SB1255
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1895
Unit: mm
12.5 3.5 15.0±0.2 0.7
s Features
q Optimum for 90W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V q Full-pack package which can be installed to the heat sink with
one screw
21.0±0.5
15.0±0.3 11.0±0.2
φ3.2±0.1
5.0±0.2 3.2
2.0±0.2
2.0±0.1
Solder Dip
16.2±0.5
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
1.1±0.1
5.45±0.3 10.9±0.5
0.6±0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO VCEO VEBO ICP IC
PC
Tj Tstg
–160 –140 –8 –12 –15 100
3 150 –55 to +150
s Electrical Characteristics (TC=25˚C)
V V V A A
W
˚C ˚C
123
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Collector cutoff current
Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Symbol
ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf
Conditions VCB = –160V, IE = 0 VCE = –140V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –7A IC = –7A, IB = –7mA...
