Power MOSFET
Applications l High frequency DC-DC converters
PD - 95258A
IRFL4315PbF
VDSS 150V
HEXFET® Power MOSFET
RDS(on) max
I...
Description
Applications l High frequency DC-DC converters
PD - 95258A
IRFL4315PbF
VDSS 150V
HEXFET® Power MOSFET
RDS(on) max
ID
185mW@VGS = 10V 2.6A
Benefits
l Low Gate to Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
l Lead-Free
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
SOT-223
Max. 2.6 2.1 21 2.8 0.02 ± 30 6.3
-55 to + 150
300 (1.6mm from case )
Units
A
W W/°C
V V/ns
°C
Thermal Resistance
Symbol RθJA
Parameter Junction-to-Ambient (PCB Mount, steady state)
Typ. –––
Notes through are on page 8 www.irf.com
Max. 45
Units °C/W
1
09/22/10
IRFL4315PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
150 ––– –––
3.0 ––– –––
––– ––– 0.19 ––– ––– 185 ––– 5.0 ––– 25 ––– 250
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
––– ––– 100 ––– ...
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