NP160N04TUK

NP160N04TUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUK-E1-AY ∗1 NP160N04TUK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Taping (E1 type) Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-263-7pin (MP-25ZT) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±160 ±640 250 1.8 175 −55 to +175 56 313 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.60 83.3 °C/W °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. RG = 25 Ω, VGS = 20 Æ 0 V R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 Page 1 of 6 NP160N04TUK Electrical Characteristics (T...