Document
General features
STD65N55
N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET
PRELIMINARY DATA
Type STD65N55
VDSS 55V
RDS(on) <10.5mΩ
ID Pw 65A 110W
■ Standard threshold drive ■ 100% avalanche tested
Description
This N-Channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
Applications
■ Switching application – Automotive
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DPAK
Internal schematic diagram
Order codes
Part number STD65N55
Marking D65N55
Package DPAK
Packaging Tape & reel
July 2006
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
Contents
STD65N55
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STD65N55
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS VGS ID ID IDM (1) PTOT
Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3) Single pulse avalanche energy
Tj Operating junction temperature Tstg Storage temperature
1. Pulse width limited by safe operating area 2. ISD <65A, di/dt <300A/µs, VDD< V(BR)DSS. Tj < Tjmax 3. Starting Tj=25°C, Id=32A, Vdd=40V
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max Rthj-pcb (1) Thermal resistance junction-ambient max
Tl Maximum lead temperature for soldering purpose
1. When mounted on FR-4 board of 1inch², 2oz Cu
Value 55 ± 20 65 46 260 110 0.73 8 390
-55 to 175
Value 1.36 50 275
Unit V V A A A W
W/°C V/ns mJ °C
Unit °C/W °C/W
°C
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Electrical characteristics
2 Electrical characteristics
STD65N55
(TCASE=25°C unless otherwise specified)
Table 3. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown voltage
IDSS
Zero gate voltage drain current (VGS = 0)
IGSS VGS(th) RDS(on)
Gate body leakage current (VDS = 0)
Gate threshold voltage
Static drain-source on resistance
Test condictions
Min. .