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STD65N55 Dataheets PDF



Part Number STD65N55
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL Power MOSFET
Datasheet STD65N55 DatasheetSTD65N55 Datasheet (PDF)

General features STD65N55 N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET PRELIMINARY DATA Type STD65N55 VDSS 55V RDS(on) <10.5mΩ ID Pw 65A 110W ■ Standard threshold drive ■ 100% avalanche tested Description This N-Channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows e.

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General features STD65N55 N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET PRELIMINARY DATA Type STD65N55 VDSS 55V RDS(on) <10.5mΩ ID Pw 65A 110W ■ Standard threshold drive ■ 100% avalanche tested Description This N-Channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Applications ■ Switching application – Automotive 3 1 DPAK Internal schematic diagram Order codes Part number STD65N55 Marking D65N55 Package DPAK Packaging Tape & reel July 2006 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 Contents Contents STD65N55 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STD65N55 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS VGS ID ID IDM (1) PTOT Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor dv/dt (2) Peak diode recovery voltage slope EAS (3) Single pulse avalanche energy Tj Operating junction temperature Tstg Storage temperature 1. Pulse width limited by safe operating area 2. ISD <65A, di/dt <300A/µs, VDD< V(BR)DSS. Tj < Tjmax 3. Starting Tj=25°C, Id=32A, Vdd=40V Table 2. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose 1. When mounted on FR-4 board of 1inch², 2oz Cu Value 55 ± 20 65 46 260 110 0.73 8 390 -55 to 175 Value 1.36 50 275 Unit V V A A A W W/°C V/ns mJ °C Unit °C/W °C/W °C 3/11 Electrical characteristics 2 Electrical characteristics STD65N55 (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage drain current (VGS = 0) IGSS VGS(th) RDS(on) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions Min. .


ESDALC14V2-1U2 STD65N55 74VHC541


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