Single N-channel Trench MOSFET
MDU1517 – Single N-Channel Trench MOSFET 30V
MDU1517
Single N-channel Trench MOSFET 30V, 100.0A, 2.9mΩ
General Descrip...
Description
MDU1517 – Single N-Channel Trench MOSFET 30V
MDU1517
Single N-channel Trench MOSFET 30V, 100.0A, 2.9mΩ
General Description
The MDU1517 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1517 is suitable device for DC to DC converter and general purpose applications.
Features
VDS = 30V ID = 100.0A @VGS = 10V RDS(ON) (MAX) < 2.9mΩ @VGS = 10V < 4.4mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
May. 2011. Version 1.2
1
G S
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Rating
30 ±20 100.0 96.0 32.9(3) 26.2(3) 100 73.5 47.0 5.5(3) 3.5(3) 187 -55~150
Unit V V
A
A
W
mJ oC
Symbol RθJA RθJC
Rating 22.7 1.7
Unit oC/W
MagnaChip Semiconductor Ltd.
MDU1517 – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number MDU1517RH
Temp. Range -55~150oC
Package PowerDFN56
Packing Tape & Reel
Quantity 3000 units
Rohs Status Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics Static Characterist...
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