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MMUN2112 Data Sheet

Bias Resistor Transistor PNP Silicon

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MMUN2112
Bias Resistor Transistor PNP Silicon MMUN2111 Series 1 BASE R1 R2 COLLECTOR 3 2 EMITTER 3 1 2 SOT-23 Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Thermal Characteristics Characteris.
MMUN2112

Download MMUN2112 Datasheet
Bias Resistor Transistor PNP Silicon MMUN2111 Series 1 BASE R1 R2 COLLECTOR 3 2 EMITTER 3 1 2 SOT-23 Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Symbol PD Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Range 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad R θJA TJ,Tstg Value 50 50 100 Max 246 (1) 400 (2) 1.5 (1) 2.0 (2) 508 311 -55 to +150 Unit Vdc Vdc mAdc Unit mW mW/ C C/W C l 88 Device Marking and Resistor Values Device MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 Marking A6A A6B A6C A6D A6E A6F R1(K) 10 22 47 10 10 4.7 R2(K) 10 22 47 47 Device MMUN2130 MMUN2131 MMUN.



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