Bias Resistor Transistor PNP Silicon
MMUN2111 Series
1 BASE
R1 R2
COLLECTOR 3
2 EMITTER
3
1 2
SOT-23
Maximum Ratin...
Bias Resistor
Transistor PNP Silicon
MMUN2111 Series
1 BASE
R1 R2
COLLECTOR 3
2 EMITTER
3
1 2
SOT-23
Maximum Ratings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage
Collector Current-Continuous
Symbol VCEO VCBO
IC
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C
Symbol PD
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range 1.FR-4 @ minimum pad
2.FR-4 @ 1.0 l 1.0 inch Pad
R θJA TJ,Tstg
Value 50 50 100
Max
246 (1) 400 (2) 1.5 (1) 2.0 (2)
508 311 -55 to +150
Unit Vdc Vdc mAdc
Unit mW mW/ C
C/W
C
l 88
Device Marking and Resistor Values
Device
MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116
Marking
A6A A6B A6C A6D A6E A6F
R1(K)
10
22 47 10 10 4.7
R2(K)
10 22 47 47
Device
MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134
Marking
A6G A6H A6J A6K A6L
R1(K)
1.0 2.2 4.7 4.7 22
R2(K)
1.0 2.2 4.7 47 47
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MMUN2111 Series
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Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage (IC=2.0mA, IB=0)
Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Base Cutoff Voltage (VCB=50 V, IE =0)
Collector-Emitter Cutoff Current (VCE=50V, IB=0) Emitter-Base Cutoff Current (VEB=6.0V, IC=0)
MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134
V(BR)CEO V(B...