MMUN2111…MMUN2134
PNP Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit applicat...
MMUN2111…MMUN2134
PNP Silicon Epitaxial Planar
Transistor
for switching and interface circuit and drive circuit applications
Resistor Values Type
MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134
R1 (K) 10 22 47 10 10 4.7 1 2.2 4.7 4.7 22
R2 (K) 10 22
47 47 ∞
∞ 1 2.2 4.7 47 47
SOT-23 Plastic Package
Base (Input)
R1 R2
Collector (Output)
Emitter (Common)
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol
-VCBO -VCEO
-IC Ptot Tj TS
Value 50 50 100 200 150
- 55 to + 150
Unit V V mA
mW OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/08/2007
MMUN2111…MMUN2134
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 10 V, -IC = 5 mA
Collector Base Cutoff Current at -VCB = 50 V Collector Emitter Cutoff Current at -VCE = 50 V Emitter Base Cutoff Current at -VEB = 6 V
Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.3 mA at -IC = 10 mA, -IB = 5 mA at -IC = 10 mA, -IB = 1 mA
Symbol
MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134
hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE
-ICBO
-ICEO
MMUN2111 MM...