IRFBC30AL

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 23 5.4 11 Single I2PAK (TO-262) D2PAK (TO-263) 2.2 D G D S G S N-Channel MOSFET FEATURES Halogen-free According to IEC 61249-2-21 Definition Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGIES Single Transistor Flyback ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3 Lead (Pb)-free IRFBC30ASPbF SiHFBC30AS-E3 Note a. See device orientation. D2PAK (TO-263) SiHFBC30ASTRL-GE3a IRFBC30ASTRLPbFa SiHFBC30ASTL-E3a D2PAK (TO-263) SiHFBC30ASTRR-GE3a IRFBC30ASTRRPbFa SiHFBC30ASTR-E3a I2PAK (TO-262) SiHFBC30AL-GE3 IRFBC30ALPbF SiHFBC30AL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e TC = 25 °C ...