NP160N04TUJ

NP160N04TUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUJ -E1-AY ∗1 NP160N04TUJ -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 800 pcs/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-263-7pin, Taping (E1 type) TO-263-7pin, Taping (E2 type) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Tstg IAR EAR Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Tch(peak) ≤ 150°C, RG = 25 Ω Ratings 40 ±20 ±160 ±640 250 1.8 175 −55 to +175 60 360 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.60 83.3 °C/W °C/W R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 Page 1 of 6 NP160N04TUJ Electrical Charac...