CEU3099

CEU3099 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. -30V , -19A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e@ TC = 25 C Drain Current-Continuous e@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 30 30 VGS ±20 ±20 ID e 26 -19 ID e 18 -13 IDM 104 -76 12.5 PD 0.1 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 12 50 Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2010.May http://www.cet-mos.com CEU3099 N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30...