CEH2609
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V.
-20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. Surfa...
