LMBT3904TT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION LMBT3904TT1G S-LMBT3904TT1G Device LMBT3904TT1G S-LMBT3904TT1G LMBT3904TT3G S-LMBT3904TT3G MAXIMUM RATINGS Rating Marking MA MA MA MA Shipping 3000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 10000/Tape&Reel Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C 40 Vdc 60 Vdc 6.0 Vdc 200 mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation FR-4 Board(2), TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max 200 1.6 600 300 2.4 400 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C SC-89 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBT3904TT1G = AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V (BR)CEO (I C = 1.0 mAdc) Collector–Base Breakdown Voltage (I C = 10 µAdc) V (BR)CBO Emitter–Base Breakdown Voltage V (BR)EBO ...