LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽSimplifies Circuit Design. ƽ We declare t...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
FEATURE
ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with
RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
LMBT3906TT1G S-LMBT3906TT1G LMBT3906TT3G S-LMBT3906TT3G
2A 2A
2A 2A
MAXIMUM RATINGS
Rating Collector–Emitter Voltage
Collector–Base Voltage Emitter–Base Voltage
Collector Current — Continuous
Shipping 3000/Tape & Reel 10000/Tape & Reel
Symbol V CEO V CBO V EBO IC
Value – 40 – 40 – 5.0 – 200
Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR– 4 Board(1) T A =25 °C Derate above 25°C
Thermal Resistance Junction to Ambient Total Device Dissipation FR-4 Board (2), T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA PD
R θJA T J , T stg
Max Unit 200 mW
1.6 mW/°C 600 °C/W 300 mW
2.4 400 –55 to +150
mW/°C °C/W
°C
LMBT3906TT1G S-LMBT3906TT1G
1 BASE
SC-89 3 COLLECTOR
2 EMITTER
DEVICE MARKING LMBT3906TT1G = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Base Cutoff ...