LMBT2222ATT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT2222ATT1G S-LMBT2222ATT1G SC-89 ORDERING INFORMATION Device Maring LMBT2222ATT1G S-LMBT2222ATT1G 1P 1P Shippin†g 3000 / Tape & Reel LMBT2222ATT3G S-LMBT2222ATT3G 1P 10000 / Tape & Reel 1P MAXIMUM RATINGS (TA = 25°C) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC Symbol PD RqJA TJ, Tstg Max Unit 40 Vdc 75 Vdc 6.0 Vdc 600 mAdc Max Unit 150 mW 833 °C/W −55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) COLLEC...