LMBT3906WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3906WT1G 2A 3000/Tape&Reel LMBT3906WT3G 2A 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Collector–Emitter Voltage VCEO Collector–Base Voltage VCBO Emitter–Base Voltage VEBO Collector Current — Continuous IC Limits –40 –40 –5 –200 Unit Vdc Vdc Vdc mAdc LMBT3906WT1G S-LMBT3906WT1G 3 1 2 SC–70 1 B ASE 3 COLLECT OR 2 EMIT T ER ●THERMAL CHARACTERISTICS Total Device Dissipation, PD 150 mW (Note 1) @ TA = 25°C Thermal Resistance, Junction–to–Ambient Junction and Storage temperature RΘJA 833 ℃/W TJ,Tstg −55∼+150 ℃ 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Symbol Collector–Emitter Breakdown Voltage(Note 2) VBR(CEO) (IC = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage VBR(CBO) (I C = –10 μAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 μAdc, I C = 0) VBR(EBO) Collector Cutoff Current ICEX ( V CE = –30 Vdc, V EB =– 3.0Vdc) Base Cutoff Current (V CE = –30 Vdc, V EB = –3.0Vdc) IBL 2.Pulse Test: Pulse Widt...