LMBT2907AWT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LMBT2907AWT1G S-LMBT2907AWT1G LMBT2907AWT3G S-LMBT2907AWT3G Mar king 20 20 Shipping 3000/Tape&Reel 10000/Tape&Reel LMBT2907AWT1G S-LMBT2907AWT1G 3 1 2 CASE 419–02 , STYLE 3 SOT–323 / SC – 70 MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value – 60 – 60 – 5.0 – 600 Unit Vdc Vdc Vdc mAdc 1 BASE 3 COLLECTOR 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING Symbol PD RθJA TJ , Tstg Max 150 833 –55 to +150 LMBT2907AWT1G =20 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) V (BR)CEO (I C = – 10 mAdc, I B = 0) Collector–Emitter Breakdown Voltage (I C = – 10 µ Adc, I E = 0) V (BR)CBO Emitter–Base Breakdown Voltage (I E = –10µAdc, I C = 0) V (BR)EBO Base Cutoff Current ( V CE = –30Vdc, V EB(OFF) = –0.5Vdc ) I BL Collector Cutoff Current ( V CE = –30Vdc, V EB(OFF) = –0.5Vdc ) I CEX 1. FR–5 = 1.0...