LMBT4401WT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LMBT4401WT1G S-LMBT4401WT1G LMBT4401WT3G S-LMBT4401WT3G Marking Shipping 2X 3000/Tape & Reel 2X 10000/Tape & Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 150 Unit mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C DEVICE MARKING LMBT4401W T1G = 2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) V (BR)CEO (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage V (BR)CBO (I C = 0.1 mAdc, I E = 0) Emitter–Base Breakdown Voltage V (BR)EBO (I E = 0.1 mAdc, I C = 0) Base Cutoff Current I BEV (V CE = 35 Vdc, V EB = 0.4 Vdc) Collector Cutoff Current I CEX (V CE = 35 Vdc, V EB = 0.4 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. 40 60...