LMBT4403WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LMBT4403WT1G S-LMBT4403WT1G LMBT4403WT3G S-LMBT4403WT3G Marking Shipping 2T 3000/Tape & Reel 2T 10000/Tape & Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value – 40 – 40 – 5.0 – 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 150 Unit mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C LMBT4403WT1G S-LMBT4403WT1G 3 1 2 SC-70 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBT4403WT1G = 2T ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –0.1mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –0.1mAdc, I C = 0) Base Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Collector Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) V (BR)CEO V (BR)CBO V (BR)EBO I BEV I CEX 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% a...