20V P-CHANNEL Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9
20V P-Ch...
Description
CYStech Electronics Corp.
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9
20V P-Channel Enhancement Mode MOSFET
MTP2301N3
BVDSS ID@TA=25°C, VGS=-4.5V
RDSON(TYP)@VGS=-4.5V, ID=-2.8A
RDSON(TYP)@VGS=-2.5V, ID=-2A
-20V -3.4A 79mΩ 116mΩ
Features
Advanced trench process technology High density cell design for ultra low on resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Pb-free lead plating and halogen-free package
Equivalent Circuit
MTP2301N3
Outline
SOT-23 D
G:Gate S:Source D:Drain
S G
Ordering Information
Device MTP2301N3-0-T1-G
Package
Shipping
SOT-23 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25°C, VGS=-4.5V Continuous Drain Current @TA=70°C, VGS=-4.5V
Pulsed Drain Current Maximum Power Dissipation
Ta=25℃
Ta=70℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID IDM
PD
Tj ; Tstg
Limits -20 ±8 -3.4 -2.7 -10 1.38 (Note)
0.88 (Note) -55~+150
U...
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