BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
General Purpose Transistor PNP Silicon
COLLECTOR 3
1 BASE
2 EMITTER
Maximum R...
BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
General Purpose
Transistor PNP Silicon
COLLECTOR 3
1 BASE
2 EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
3
1 2
SOT-23
MARKING DIAGRAM 3
XX = Device Code (See 1 2 Table Below)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
Collector-Base Voltage
BC856
BC857
BC858,BC859
Emitter-Base VOltage
Collector Current-Continuous
Symbol VCEO
VCBO VEBO
IC
Value -65 -45 -30 -80 -50 -30 -5.0
-100
Unit V
V V mAdc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C
Thermal Resistance, Junction to Ambient
Symbol PD
R θJA
PD R θJA
Max
225 1.8 556
300 2.4 417
Unit
mW mW/ C
C/W
mW mW/ C
C/W
Junction and Storage, Temperature
TJ,Tstg
-55 to +150
C
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage (IC= -10mA)
BC856 Series BC857 Series
V(BR)CEO
-65 -45
-
-V -
BC858, BC859 Series
-30 - -
Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0)
BC856 Series BC857 Series
V(BR)CES
-80 -50
-
-V -
BC858, BC859 Series
-30 - -
Collector-Base Breakdown Voltage (IC=-10 µA)
BC856 Series BC857 Series
V(BR)CBO
-80 -50
-
-V -
BC858, BC8...