Document
BC856 SERIES
DATA SHEET
PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER 225 mW
SOT- 23
FEATURES
General Purpose Amplifier Applications
NPN Epitaxial Silicon, Planar Design
Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series
Pb free product are available : 99% Sn above can meet RoHS environment substance directive request
.056(1.40) .047(1.20)
.119(3.00) .110(2.80)
.083(2.10) .066(1.70)
MECHANICAL DATA
Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking :
.006(.15)MAX
.020(.50) .014(.35)
.044(1.10) .035(0.90)
.007(.20)MIN .103(2.60) .086(2.20)
Unit: inch (mm)
.006(.15) .002(.05)
BC856A=56A BC857A=57A BC856B=56B BC857B=57B
BC857C=57C
BC858A=58A BC858B=58B BC858C=58C
BC859B=59B BC859C=59C
Top View
3 Collector
1 BASE
3 COLLECTOR
1 Base
2 Emitter
2 EMITTER
ABSOLUTE MAXIMUM RATINGS
PA RA ME TE R Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Max Power Dissipation (Note 1) Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
S YMB OL B C 8 5 6 B C 8 5 7 B C 8 5 8 B C 8 5 9 UNITS
VCEO
-65
-45
-30
V
VCBO
-80
-50
-30
V
VEBO
-5
V
IC
-100
mA
P TOT
225 mW
TJ,TSTG
-50 TO +150
OC
STAD-JUL.11.2005
PAGE . 1
BC856 SERIES
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance , Junction to Ambient
RΘJA
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.
Value 556
UNIT OC /W
EL ECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted)
PARAMETER Collector - Emitter Breakdown Voltage (IC=-10mA, IB=0)
SYMBOL BC856A,B BC857A,B,C V(BR)CE0 BC858A,B,C, BC859B,C
MIN. -65 -45 -30
Collector - Base Breakdown Voltage (IC=-10µA, IE=0)
BC856A,B BC857A,B,C V(BR)CB0 BC858A,B,C, BC859B,C
-80 -50 -30
Emitter - Base Breakdown Voltage (IE=-1µA, IC=0)
V(BR)EB0
-5.0
Emitter-Base Cutoff Current (VEB=-5V)
IEBO
-
Collector-Base Cutoff Current (VCB=-30V, IE=0)
DC Current Gain (IC=-10µA, VCE=-5V)
T J=150 OC BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C
(IC=-2.0mA, VCE=-5V)
BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
ICBO hFE
-
110 200 420
Collector – Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
Base – Emitter Saturation Voltage
(IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
Base – Emitter On Voltage
(IC=-2.0mA, VCE=-5.0V)
(IC=-10mA, VCE=-5.0V)
Collector - Base Capacitance
(VCB=-10V, IE=0, f=1MHz)
VCE(SAT) VBE(SAT) VBE(ON)
CCB
-0.60 -
Current-Gain - Bandwidth Product (IC=-10mA, VCE=-5.0V, f=100MHz)
FT -
TYP. 90
150 270
180 290 520
-0.7 -0.9 -
200
MAX. -
-100 -15 -4.0 -
220 450 800 -0.3 -0.65
-0.75 -0.82 4.5
-
UNIT V
V V nA nA uA
-
V V V pF MHz
STAD-JUL.11.2005
PAGE . 2
BC856 SERIES
hFE
ELECTRICAL CHARACTERISTICS CURVES
600 TJ=150OC
500
400 TJ=100OC 300 200
TJ=25OC
100 V =CE -5V
0 0.01
0.1 1 10 Co.