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BC858B Dataheets PDF



Part Number BC858B
Manufacturers Pan Jit International
Logo Pan Jit International
Description PNP Transistor
Datasheet BC858B DatasheetBC858B Datasheet (PDF)

BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER 225 mW SOT- 23 FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .056(1.40) .047(1.20) .119(3.00) .110(2.80) .083(2.10) .066(1.70) MECHANICAL DATA Case: SOT-23 Terminals : Solderabl.

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BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER 225 mW SOT- 23 FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .056(1.40) .047(1.20) .119(3.00) .110(2.80) .083(2.10) .066(1.70) MECHANICAL DATA Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking : .006(.15)MAX .020(.50) .014(.35) .044(1.10) .035(0.90) .007(.20)MIN .103(2.60) .086(2.20) Unit: inch (mm) .006(.15) .002(.05) BC856A=56A BC857A=57A BC856B=56B BC857B=57B BC857C=57C BC858A=58A BC858B=58B BC858C=58C BC859B=59B BC859C=59C Top View 3 Collector 1 BASE 3 COLLECTOR 1 Base 2 Emitter 2 EMITTER ABSOLUTE MAXIMUM RATINGS PA RA ME TE R Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Max Power Dissipation (Note 1) Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e S YMB OL B C 8 5 6 B C 8 5 7 B C 8 5 8 B C 8 5 9 UNITS VCEO -65 -45 -30 V VCBO -80 -50 -30 V VEBO -5 V IC -100 mA P TOT 225 mW TJ,TSTG -50 TO +150 OC STAD-JUL.11.2005 PAGE . 1 BC856 SERIES THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance , Junction to Ambient RΘJA Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout. Value 556 UNIT OC /W EL ECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted) PARAMETER Collector - Emitter Breakdown Voltage (IC=-10mA, IB=0) SYMBOL BC856A,B BC857A,B,C V(BR)CE0 BC858A,B,C, BC859B,C MIN. -65 -45 -30 Collector - Base Breakdown Voltage (IC=-10µA, IE=0) BC856A,B BC857A,B,C V(BR)CB0 BC858A,B,C, BC859B,C -80 -50 -30 Emitter - Base Breakdown Voltage (IE=-1µA, IC=0) V(BR)EB0 -5.0 Emitter-Base Cutoff Current (VEB=-5V) IEBO - Collector-Base Cutoff Current (VCB=-30V, IE=0) DC Current Gain (IC=-10µA, VCE=-5V) T J=150 OC BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C (IC=-2.0mA, VCE=-5V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C ICBO hFE - 110 200 420 Collector – Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA) (IC=-100mA, IB=-5.0mA) Base – Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA) (IC=-100mA, IB=-5.0mA) Base – Emitter On Voltage (IC=-2.0mA, VCE=-5.0V) (IC=-10mA, VCE=-5.0V) Collector - Base Capacitance (VCB=-10V, IE=0, f=1MHz) VCE(SAT) VBE(SAT) VBE(ON) CCB -0.60 - Current-Gain - Bandwidth Product (IC=-10mA, VCE=-5.0V, f=100MHz) FT - TYP. 90 150 270 180 290 520 -0.7 -0.9 - 200 MAX. - -100 -15 -4.0 - 220 450 800 -0.3 -0.65 -0.75 -0.82 4.5 - UNIT V V V nA nA uA - V V V pF MHz STAD-JUL.11.2005 PAGE . 2 BC856 SERIES hFE ELECTRICAL CHARACTERISTICS CURVES 600 TJ=150OC 500 400 TJ=100OC 300 200 TJ=25OC 100 V =CE -5V 0 0.01 0.1 1 10 Co.


BC857B BC858B BC859B


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