BC857

SMD Type TransistIoCrs PNP General Purpose Transistor BC856,BC857,BC858 Features Low current (max. 100 mA). Low voltage (max. 65 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856 Collector-base voltage VCBO -80 Collector-emitter voltage VCEO -65 Emitter-base voltage VEBO Collector current IC Peak collector current ICM Peak base current IBM Total power dissipation * Ptot Junction temperature Tj Storage temperature Tstg Operating ambient temperature Ramb Thermal resistance from junction to ambient * Rth j-a * Transistor mounted on an FR4 printed-circuit board, standard footprint. BC857 -50 -45 -5 -100 -200 -200 250 150 -65 to +150 -65 to +150 500 BC858 -30 -30 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Unit V V V mA mA mA mW K/W www.kexin.com.cn 1 SMD Type TransistIoCrs BC856,BC857,BC858 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BC856 BC857 DC current gain BC856A,BC857A BC856B,BC857B,BC858B BC857C Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector capacitance Transition frequency Noise figure * Pulse test: tp 300µs, ä 0.02. Symbol ICBO ICBO IEBO Testconditons VCB = -30 V, IE = 0 VCB = -30 V, IE = 0 , Tj = 150 VEB = -5 V, IC = 0 hFE IC = -2 mA; VCE = -5 V VCE(sat) VBE(s...