DatasheetsPDF.com

BC857A Dataheets PDF



Part Number BC857A
Manufacturers NXP
Logo NXP
Description PNP Transistor
Datasheet BC857A DatasheetBC857A Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet Supersedes data of 2003 Apr 09 2004 Jan 16 NXP Semiconductors PNP general purpose transistors Product data sheet BC856; BC857; BC858 FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC.

  BC857A   BC857A


Document
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet Supersedes data of 2003 Apr 09 2004 Jan 16 NXP Semiconductors PNP general purpose transistors Product data sheet BC856; BC857; BC858 FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING TYPE NUMBER BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858B MARKING CODE(1) 3D* 3A* 3B* 3H* 3E* 3F* 3G* 3K* Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. handbook, halfpage 3 1 Top view 1 2 MAM256 3 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BC856 BC857 BC858 NAME − − − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads VERSION SOT23 SOT23 SOT23 2004 Jan 16 2 NXP Semiconductors PNP general purpose transistors Product data sheet BC856; BC857; BC858 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage BC856 BC857 BC858 collector-emitter voltage BC856 BC857 BC858 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. MIN. MAX. UNIT − −80 V − −50 V − −30 V − −65 V − −45 V − −30 V − −5 V − −100 mA − −200 mA − −200 mA − 250 mW −65 +150 °C − 150 °C −65 +150 °C TYPICAL 500 UNIT K/W 2004 Jan 16 3 NXP Semiconductors PNP general purpose transistors Product data sheet BC856; BC857; BC858 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector-base cut-off current IEBO hFE VCEsat emitter-base cut-off current DC current gain BC856 BC857 BC856A; BC857A BC856B; BC857B; BC858B BC857C collector-emitter saturation voltage VBEsat base-emitter saturation voltage VBE base-emitter voltage Cc collector capacitance fT transition frequency F noise figure Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. CONDITIONS MIN. VCB = −30 V; IE = 0 VCB = −30 V; IE = 0; Tj = 150 °C VEB = −5 V; IC = 0 IC = −2 mA; VCE = −5 V − − − 125 125 125 220 420 IC = −10 mA; IB = −0.5 mA − IC = −100 mA; IB = −5 mA; − note 1 IC = −10 mA; IB = −0.5 mA − IC = −100 mA; IB = −5 mA; − note 1 IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V VCB = −10 V; IE = Ie = 0; f = 1 MHz −600 − − VCE = −5 V; IC = −10 mA; 100 f = 100 MHz IC = −200 μA; VCE = −5 V; − RS = 2 kΩ; f = 1 kHz; B = 200 Hz TYP. −1 − − − − − − − −75 −250 −700 −850 −650 − 4.5 − 2 MAX. −15 −4 −100 475 800 250 475 800 −300 −650 − − −750 −820 − − 10 UNIT nA μA nA mV mV mV mV mV mV pF MHz dB 2004 Jan 16 4 NXP Semiconductors PNP general purpose transistors Product data sheet BC856; BC857; BC858 500 handbook, halfpage hFE 400 300 200 100 (1) (2) (3) MGT711 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 IC (mA) BC857A; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.2 DC current gain as a function of collector current; typical values. − 1200 haVnBdbEook, halfpage (mV) − 1000 − 800 − 600 − 400 (1) (2) (3) MGT712 − 200 0 −10−2 −10−1 −1 − 10 − 102 − 103 IC (mA) BC857A; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.3 Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT713 − 102 (1) (3) (2) − 10 − 10−1 −1 − 10 − 102 − 103 IC (mA) BC857A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. − 1200 hVaBndEbsoaotk, halfpage (mV) − 1000 − 800 − 600 MGT714 (1) (2) (3) − 400 − 200 0 − 10−1 −1 − 10 − 102 − 103 IC (mA) BC857A; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 16 5 NXP Semiconductors PNP general purpose transistors Product data sheet BC856; BC857; BC858 1000 handbook, halfpage hFE 800 MGT715 600 (1) 400 (2) 200 (3) 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 IC (mA) BC857B; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 DC current gain as a function of collector current; typical values. − 1200 haVnBdbEook, halfpage (mV) − 1000 −.


BC856B BC857A BC857B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)