Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BC856; BC857; BC858 PNP general purpose transistors
Product data sheet Supersedes data of 2003 Apr 09
2004 Jan 16
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V).
APPLICATIONS • General purpose switching and amplification.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848.
MARKING
TYPE NUMBER BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858B
MARKING CODE(1) 3D* 3A* 3B* 3H* 3E* 3F* 3G* 3K*
Note
1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China.
handbook, halfpage
3
1
Top view
1
2
MAM256
3 2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
BC856 BC857 BC858
NAME − − −
PACKAGE
DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads
VERSION SOT23 SOT23 SOT23
2004 Jan 16
2
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL VCBO
VCEO
VEBO IC ICM IBM Ptot Tstg Tj Tamb
PARAMETER
collector-base voltage BC856 BC857 BC858
collector-emitter voltage BC856 BC857 BC858
emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS in free air; note 1
Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
MIN.
MAX.
UNIT
− −80 V − −50 V − −30 V
− −65 V
− −45 V
− −30 V
− −5 V
−
−100
mA
−
−200
mA
−
−200
mA
− 250 mW
−65
+150
°C
− 150 °C
−65
+150
°C
TYPICAL 500
UNIT K/W
2004 Jan 16
3
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO collector-base cut-off current
IEBO hFE
VCEsat
emitter-base cut-off current DC current gain
BC856 BC857 BC856A; BC857A BC856B; BC857B; BC858B BC857C collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
VBE base-emitter voltage Cc collector capacitance fT transition frequency F noise figure
Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
MIN.
VCB = −30 V; IE = 0
VCB = −30 V; IE = 0; Tj = 150 °C VEB = −5 V; IC = 0 IC = −2 mA; VCE = −5 V
− − −
125
125
125
220
420
IC = −10 mA; IB = −0.5 mA −
IC = −100 mA; IB = −5 mA; − note 1
IC = −10 mA; IB = −0.5 mA −
IC = −100 mA; IB = −5 mA; − note 1
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−600 − −
VCE = −5 V; IC = −10 mA; 100 f = 100 MHz
IC = −200 μA; VCE = −5 V; − RS = 2 kΩ; f = 1 kHz; B = 200 Hz
TYP. −1 −
−
− − − − − −75 −250
−700 −850
−650 − 4.5
−
2
MAX. −15 −4
−100
475 800 250 475 800 −300 −650
− −
−750 −820 −
−
10
UNIT nA μA nA
mV mV mV mV mV mV pF MHz dB
2004 Jan 16
4
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
500
handbook, halfpage
hFE 400
300
200
100
(1)
(2) (3)
MGT711
0 − 10−2
− 10−1
−1
− 10
− 102
− 103
IC (mA)
BC857A; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
Fig.2 DC current gain as a function of collector current; typical values.
− 1200 haVnBdbEook, halfpage
(mV) − 1000
− 800
− 600
− 400
(1) (2)
(3)
MGT712
− 200
0 −10−2 −10−1
−1
− 10
− 102
− 103
IC (mA)
BC857A; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.3 Base-emitter voltage as a function of collector current; typical values.
− 104
handbook, halfpage
VCEsat (mV)
− 103
MGT713
− 102
(1)
(3) (2)
− 10 − 10−1
−1
− 10
− 102
− 103
IC (mA)
BC857A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values.
− 1200 hVaBndEbsoaotk, halfpage
(mV) − 1000
− 800
− 600
MGT714
(1) (2) (3)
− 400
− 200
0 − 10−1
−1
− 10
− 102
− 103
IC (mA)
BC857A; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.5 Base-emitter saturation voltage as a function of collector current; typical values.
2004 Jan 16
5
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
1000
handbook, halfpage
hFE
800
MGT715
600
(1)
400
(2)
200 (3)
0 − 10−2
− 10−1
−1
− 10
− 102
− 103
IC (mA)
BC857B; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
Fig.6 DC current gain as a function of collector current; typical values.
− 1200 haVnBdbEook, halfpage
(mV) − 1000
−.