BC858B

BC858B SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -10mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) Collector cut-off current (VCB= -25V, IE=0) Collector cut-off current (VCE= -25V, IB=0) Emitter cut-off current (VEB= -5V, IC=0) DC current gain (VCE= -5V, IC= -2mA) Collector-emitter saturation voltage (IC= -100mA, IB= -5mA) Base-emitter saturation voltage (IC= -100mA, IB= -10mA) V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ) DEVICE MARKING BC858B Notes : 1. Transistor mounted on an FR4 Printed-circuit board. 2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. fT SOT-23 COLLECTOR 3 BASE 1 2 EMITTER 0...