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BC858B

SeCoS

General Purpose Transistor

Elektronische Bauelemente BC856A, B BC857A, B, C BC858A, B, C FEATURES A suffix of "-C" specifies halogen & lead-free...


SeCoS

BC858B

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Description
Elektronische Bauelemente BC856A, B BC857A, B, C BC858A, B, C FEATURES A suffix of "-C" specifies halogen & lead-free n General Purpose Transistor PNP Type n Collect current : - 0.1A n Operating Temp. : -55OC ~ +150 OC n RoHS compliant product A L 3 Top View 12 BS C OLLE C TOR 3 1 B AS E 3 1 2 V D G C H K 2 E MITTE R SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅ Parameter Symbol Test conditions MIN Collector-base breakdown voltage Collector-emitter breakdown voltage BC856 BC857 BC858 BC856 BC857 BC858 VCBO Ic= -10­Aˈ I E=0 VCEO Ic= -10 mAˈ IB=0 -80 -50 -30 -65 -45 -30 Emitter-base breakdown voltage Collector cut-off current Collector cut-off current BC856 BC857 BC858 BC856 BC857 BC858 VEBO ICBO ICEO IE= -10 ­Aˈ IC=0 VCB= -70 V , VCB= -45 V , VCB= -25 V , VCE= -60 V , VCE= -40 V , VCE= -25 V , IE=0 IE=0 IE=0 IB=0 IB=0 IB=0 -5 Emitter cut-off current IEBO V EB= -5 V , IC=0 DC current gain BC856A,857A,858A BC856B,857B,858B BC857C,BC858C HFE˄1˅ VCE= -5V, IC= -2mA 125 220 420 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5 mA MAX UNIT V V V -0.1 ­A -0.1 ­A -0.1 250 475 800 -0.5 ­A V Base-emitter saturation voltage VBE(sat) IC= -100 mA, IB= -5mA -1.1 Transition frequency DEVICE MARKING VCE= -5 V, IC= -10mA fT ...




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