MJE13005-H

UNISONIC TECHNOLOGIES CO., LTD MJE13005-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.  FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information  APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13005L-H-x-T92-B MJE13005G-H-x-T92-B MJE13005-L-H-x-T92-K MJE13005G-H-x-T92-K Note: Pin assignment: E: Emitter B: Base C: Collector Package TO-92 TO-92 Pin Assignment 123 BCE BCE Packing Tape Box Bulk  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage Collector-Emitter Voltage (VBE=0) VCEO(SUS) VCES 400 900 V V Collector-Base Voltage Emitter Base Voltage VCBO 900 V VEBO 9 V Collector Current Continuous Peak (1) IC ICM 4A 8A Base Current Continuous Peak (1) IB IBM 2A 4A Emitter Current Continuous Peak (1) IE IEM 6A 12 A Power Dissipation at TA=25°С Derate above 25°С PD ...