SD723

polyfet rf devices SD723 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60.0 Watts Push - Pull Package Style AD HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Total Device Dissipation 270 Watts Junction to Case Thermal Resistance o 0.65 C/W ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Gate Voltage 200 oC oo -65 C to 150 C 15.0 A 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V RF CHARACTERISTICS ( 60.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps Common Source Power Gain η Drain Efficiency 13 65 dB Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz % Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Bvdss Idss Drain Breakdown Voltage Zero Bias Drain Current 36 V Ids = 60.00 mA, Vgs = 0V 3.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Cur...