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HB56D473EJ-7

Hitachi Semiconductor

High Density Dynamic RAM Module

HB56D473EJ Series 4,194,304-word × 72-bit High Density Dynamic RAM Module ADE-203-725A (Z) Rev. 1.0 Feb. 27, 1997 Descri...


Hitachi Semiconductor

HB56D473EJ-7

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Description
HB56D473EJ Series 4,194,304-word × 72-bit High Density Dynamic RAM Module ADE-203-725A (Z) Rev. 1.0 Feb. 27, 1997 Description The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56D473EJ is a 4M × 72 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package, 1 pieces of 16bit BiCMOS line driver (74ABT16244) sealed in TSSOP package and 1 pieces of 20-bit BiCMOS line driver (74ABT16827) sealed in TSSOP package. An outline of the HB56D473EJ is 168-pin socket type package (dual lead out). Therefore, the HB56D473EJ makes high density mounting possible without surface mount technology. The HB56D473EJ provides common data inputs and outputs. Decoupling capacitors are mounted on the module board. Features 168-pin socket type package (Dual lead out)  Outline: 133.35 mm (Length) × 25.40 mm (Height) × 9.00 mm (Thickness)  Lead pitch: 1.27 mm Single 5 V (±5%) supply High speed  Access time: tRAC = 60/70 ns (max) tCAC = 20/25 ns (max) Low power dissipation  Active mode: 12.5/11.3 W (max)  Standby mode (TTL): 588 mW (max) (CMOS): 462 mW (max) Buffered input except RAS and DQ 4 byte interleave enabled, dual address input (A0/B0) JEDEC standard outline buffered 8-byte DIMM Fast page mode capability 2,048 refresh cycles: 32 ms HB56D473EJ Series 2 var...




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