ZXMC3F31DN8

ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V(BR)DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 Q2 -30 12.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for power management and battery charging functions. Features Low on-resistance 4.5V gate drive capability Low profile SOIC package D1 D2 Applications DC-DC Converters SMPS Load switching switches Motor control Backlighting G1 G2 S1 Q1 N-Channel S2 Q2 P-Channel Ordering information Device ZXMC3F31DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 Device marking ZXMC 3F31 S1 D1 N G1 D1 S2 D2 P G2 D2 Top view Issue 1 - September 2008 © Diodes Incorporated 2008 1 www.zetex.com www.diodes.com ZXMC3F31DN8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage (b)(d) Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C (b)(d) (a)(d) @ VGS= 10V; TA=25°C (a)(e) @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C (f)(d) (c) Pulsed Drain current (b)(d) Continuous Source current (Body diode) (c)(d) Pulsed Source current (Body diode) (a)(d) Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C (a)(e) Linear derating factor Power dissipation at TA =25°C (b)(d) Linea...