100V N-CHANNEL MOSFET
ZXMN10A08DN8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A
DESCRIPTION
This ...
Description
ZXMN10A08DN8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control
ORDERING INFORMATION
DEVICE
REEL TAPE QUANTITY SIZE WIDTH PER REEL
ZXMN10A08DN8TA 7” 12mm 500 units
ZXMN10A08DN8TC 13” 12mm 2,500 units
DEVICE MARKING ZXMN
10A08D
SO8
PINOUT
Top View
ISSUE 4 - JANUARY 2005
1
SEMICONDUCTORS
ZXMN10A08DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current
VGS=10V; VGS=10V; VGS=10V;
TA=25°C TA=70°C TA=25°C
(b) (b) (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at TA=25°C (a) Linear derating factor
Power dissipation at TA=25°C (b) Linear derating factor
Operating and storage temperature range
SYMBOL VDSS VGS ID
IDM IS ISM PD
PD
Tj:Tstg
LIMIT
100
20
2.1 1.7 1.6
9
2.6
9
1.25 10
1.8 14.5
-55 to +150
UNIT V V A
A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to ambient (a) Junction to ambient (b)
SYMBOL RθJA RθJA
VALU...
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