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WPT2E33

Will Semiconductor

Power Transistor

WPT2E33 Single, PNP, -30V, -3A, Power Transistor Descriptions The WPT2E33 is PNP bipolar power transistor with very low ...


Will Semiconductor

WPT2E33

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Description
WPT2E33 Single, PNP, -30V, -3A, Power Transistor Descriptions The WPT2E33 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and other power management. Standard Product WPT2E33 is Pb-free. WPT2E33 Http//:www.willsemi.com SOT-89-3L C 4 Features z Ultra low collector-to-emitter saturation voltage z High DC current gain >100 z 3A continue collector current z Small package SOT-89-3L. 12 3 BCE Pin configuration (Top view) 4 WPT2E33 YYWW 12 3 Applications z Charging circuit z Power regulator z Other power management in portable equipments WPT2E33 YY WW Marking = Device code = Year = Week Order information Device Package Shipping WPT2E33-3/TR SOT-89-3L 1000/Reel&Tape Will Semiconductor Ltd. 1 Jun, 2011 - Rev.1.2 Absolute maximum ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Continues collector current a Continues collector current b Pulse collector current c Power dissipation a Power dissipation b Junction Temperature Lead Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC ICM PD TJ TL Tstg Value -30 -30 -6 -3 -2 -6 3.0 1.5 150 260 -55~155 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width=300µs, Duty Cycle<2% Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Collector-emitter breakdown voltage Collector-base breakdown vol...




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