30H150

30H150 N-Channel Enhancement Mode MOSFET Features 30V/150 A RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management in Desktop Computer or DC/DC Converters. D G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy, L=0.5mH Note * Current limited by bond wire. www.fnk-tech.com 1 TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating Unit 30 ±20 150 -55 to 150 150 200 120 150* 68 50 20 2.5 50 225 V °C °C A A A W °C/W °C/W mJ 0752-7777359 Electrical Characteristics (TA = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=20V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A VGS=4.5V, IDS=20A Diode Characteristics VSDa Diode For...