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MBR4045 Dataheets PDF



Part Number MBR4045
Manufacturers LTO-DMS
Logo LTO-DMS
Description 40 Amp HT Power Schottky Barrier Rectifier
Datasheet MBR4045 DatasheetMBR4045 Datasheet (PDF)

LTO-DMS MBR4040 thru MBR4060 40 Amp HT Power Schottky Barrier Rectifier 40 Volts to 60 Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings * Operating Junction Temperature: 150°C * Storage Temperature: - 55 °C to +175°C * Per diode Thermal Resistance 2.2°C/W Junction to Case Mechanical Data * Case: Molded Plastic * Terminals: Plated Lead Solderable per MIL-STD-202, Method 208 * Marking:Type .

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LTO-DMS MBR4040 thru MBR4060 40 Amp HT Power Schottky Barrier Rectifier 40 Volts to 60 Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings * Operating Junction Temperature: 150°C * Storage Temperature: - 55 °C to +175°C * Per diode Thermal Resistance 2.2°C/W Junction to Case Mechanical Data * Case: Molded Plastic * Terminals: Plated Lead Solderable per MIL-STD-202, Method 208 * Marking:Type Number * Weight: 6 grams (approx) LTO-DMS Semiconductor Corporation 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696 TO-3P Millimeter Dim Min.. Max A 4.70 B 2.79 C 1.50 D 1.00 E 2.00 F 3.00 G 0.400 H 21.8 J 15.9 K 5.45 L 20.2 M 4.00 N 3.00 P 6.80 Q 4.44 R 1.72 5.30 3.18 2.50 1.40 2.40 3.40 0.800 22.4 16.5 ---20.6 4.60 3.40 7.62 5.30 2.03 Inches Min. 0.185 0.110 0.059 0.040 0.079 0.118 0.016 0.860 0.627 0.215 0.795 0.157 0.118 0.268 0.175 0.068 Max. 0.209 0.125 0.098 0.055 0.094 0.133 0.031 0.883 0.650 ---0.810 0.180 0.133 0.300 0.210 0.080 Symbol Characteristics MBR4040 MBR4045 VRRM Maximum Recurrent Peak Reverse Voltage 40 45 VRM Maximum DC Blocking Voltage 40 45 VR(RMS) Maximum RMS Voltage 28 31.5 Maximum Forward Voltage Drop Per Element VF IF=40A @TJ=25°C 0.70 IF(AV) Average Forward Current 40 IFSM 8.3ms Single Half-Sine-Wave Superimposed On Rated Load 300 dv/dt Voltage Rate Of Change (Rated VR) 10000 Maximum DC Reverse Current TJ=25°C IR At Rated DC Blocking Voltage TJ=125°C 0.2 40 RthJC Typical Thermal Resistance (Note 2) 2.0 CJ Typical Junction Capacitance (Note 3) 400 TJ Operating Temperature Range -55to+150 TSTG Storage Temperature Range -55to+175 NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. MBR4060 60 60 42 0.80 Unit V V V V A A V/us mA °C/ W pF °C °C Revision: 1 2002/06/17 .


MBR4040 MBR4045 PS222L


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