Document
LTO-DMS
MBR4040 thru MBR4060
40 Amp HT Power Schottky Barrier Rectifier 40 Volts to 60 Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings * Operating Junction Temperature: 150°C * Storage Temperature: - 55 °C to +175°C * Per diode Thermal Resistance 2.2°C/W Junction to Case Mechanical Data * Case: Molded Plastic * Terminals: Plated Lead Solderable per
MIL-STD-202, Method 208 * Marking:Type Number * Weight: 6 grams (approx)
LTO-DMS Semiconductor Corporation 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696
TO-3P
Millimeter
Dim
Min..
Max
A 4.70 B 2.79 C 1.50 D 1.00 E 2.00 F 3.00 G 0.400 H 21.8 J 15.9 K 5.45 L 20.2 M 4.00 N 3.00 P 6.80 Q 4.44 R 1.72
5.30 3.18 2.50 1.40 2.40 3.40 0.800 22.4 16.5 ---20.6 4.60 3.40 7.62 5.30 2.03
Inches
Min.
0.185 0.110 0.059 0.040 0.079 0.118 0.016 0.860 0.627 0.215 0.795 0.157 0.118 0.268 0.175 0.068
Max.
0.209 0.125 0.098 0.055 0.094 0.133 0.031 0.883 0.650 ---0.810 0.180 0.133 0.300 0.210 0.080
Symbol
Characteristics
MBR4040 MBR4045
VRRM Maximum Recurrent Peak Reverse Voltage
40 45
VRM Maximum DC Blocking Voltage
40 45
VR(RMS) Maximum RMS Voltage
28 31.5
Maximum Forward Voltage Drop Per Element VF
IF=40A @TJ=25°C
0.70
IF(AV) Average Forward Current
40
IFSM
8.3ms Single Half-Sine-Wave Superimposed On Rated Load
300
dv/dt Voltage Rate Of Change (Rated VR)
10000
Maximum DC Reverse Current TJ=25°C
IR
At Rated DC Blocking Voltage TJ=125°C
0.2 40
RthJC Typical Thermal Resistance (Note 2)
2.0
CJ Typical Junction Capacitance (Note 3)
400
TJ Operating Temperature Range
-55to+150
TSTG Storage Temperature Range
-55to+175
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
MBR4060
60 60 42
0.80
Unit
V V V
V
A
A
V/us
mA
°C/ W pF °C °C
Revision: 1
2002/06/17
.