1N914

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 100 V Repetitive peak forward current: max. 225 mA. The diode is type branded. handbook, halfpage k 1N914 DESCRIPTION The 1N914 is a high-speed switching diode fabricated in planar technology, and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APPLICATIONS High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 250 +200 175 A A A mW °C °C see Fig.2; note 1 CONDITIONS − − − − MIN. MAX. 100 75 75 225 V V mA mA UNIT 1999 May 26 2 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERI...