500mW 100Volt Silicon Epitaxial Diodes
NOT RECOMMENDED FOR NEW DESIGNS
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Ch...
Description
NOT RECOMMENDED FOR NEW DESIGNS
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
1N914(A)(B)
)HDWXUHV
Moisture Sensitivity Level 1 Low Current Leakage Compression Bond Construction Low Cost
Marking : Cathode band and type number Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
0D[LPXP5DWLQJV
Operating Temperature: -55OC to +150OC Storage Temperature: -55OC to +150OC Maximum Thermal Resistance; 300OC/W Junction To Ambient
Electrical Characteristics @ 25OC Unless Otherwise Specified
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Power Dissipation Junction Temperature
Peak Forward Surge Current
VRRM
IO PD TJ
IFSM
100V
200mA 500mW 150OC
1.0A
4.0A
Minimum Breakdown Voltage
VR
100V 75V
Maximum
Instantaneous
Forward Voltage
1N914 1N914 A
VF
1.0V
1N914 B
1N914 B
720mV
Maximum Reverse
25nA
Current
IR
5.0µA 50µA
Typical Junction Capacitance
CJ
4.0pF
Reverse Recovery
Time
Trr
4.0nS
*Pulse test: Pulse width 300 usec, Duty cycle 2%
Pulse Width=1.0 second Pulse Width=1.0 microsecond IR=100µA, IR=5.0µA
TJ = 25OC IFM = 10mA; IFM = 20mA; IFM = 100mA; IFM = 5.0mA; VR=20V, TJ=25OC, VR=75V, TJ=25OC, VR=20V, TJ=150OC Measured at 1.0MHz, VR=0V IF=10mA VR = 6V RL=100 Ù, Irr=1.0mA
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.
500mW 100 Volt Sil...
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