Effect Transistor. PTF102015 Datasheet

PTF102015 Transistor. Datasheet pdf. Equivalent

Part PTF102015
Description Field Effect Transistor
Feature PRELIMINARY PTF 102015* GOLDMOS® Field Effect Transistor 30 Watts, 2110-2170 MHz Description Ef.
Manufacture Ericsson
Datasheet
Download PTF102015 Datasheet

PRELIMINARY PTF 102015* GOLDMOS® Field Effect Transistor PTF102015 Datasheet
Recommendation Recommendation Datasheet PTF102015 Datasheet





PTF102015
PRELIMINARY
PTF 102015*
GOLDMOS® Field Effect Transistor
30 Watts, 2110-2170 MHz
Description
The PTF 102015 is a 30–watt GOLDMOS FET intended for WCDMA
applications from 2110 to 2170 MHz. This LDMOS device operates
at 47% efficiency with 13 dB gain. Nitride surface passivation and
full gold metallization ensure excellent device lifetime and reliability.
WCDMA Performance
20
VDS = 28 V
16 IDQ = 320 mA
fC = 2170
12
Ef f icienc y
8 ACPR1 (FC + 5 MHz)
4
-20
-35
-50
0
ACPR2 (FC + 10 MHz)
-65
0 0.5 1 1.5 2 2.5 3 3.5 4
• Typical WCDMA Performance
- Average Output Power = 3.2 Watts
- Gain = 14 dB
- Efficiency = 17 %
(Channel Bandwidth 4.096 MHz)
• Typical CW Performance
- Output Power at P-1dB = 34 Watts
- Gain = 13 dB
- Efficiency = 47 %
• Full Gold Metallization
• Integrated ESD Protection
• Excellent Thermal Stability
• Broadband Internal Matching
• Low HCI Drift
• Will Handle 10:1 VSWR at 28 V, 30 W
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102015
Average Output Power (W)
Guaranteed Performance
Package 20265
Two-Tone Measurements
VDD = 28 V, POUT = 30 W (PEP), IDQ = 320 mA, fC = 2.17 GHz, Tone Spacing = 1 MHz
Characteristic
Symbol Min
Gain
Drain Efficiency
Gps 13
hD 34
Intermodulation Distortion
IMD —
Typ
-32
Max
-28
Units
dB
%
dBc
WCDMA Measurements
Single Carrier 3GPP, Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 9.0:1, POUT= 3 W, f = 2.17 GHz
Characteristic
Symbol Min Typ Max Unit
Adjacent Channel Power Ratio
Gain
ACPR
-46
-42
dB
Gps 13 — — dB
Drain Efficiency
hD 13.0 — — %
All published data at TCASE = 25°C unless otherwise indicated.
* Note: Specification is preliminary and subject to change. Order this product or obtain additional information from your Ericsson Sales Representative.
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PTF102015
PRELIMINARY PTF 102015
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA
Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 1 mA
On-State Resistance
VGS = 10 V, IDS = 0.1 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
Typical Performance
(Modified 3GPP: Clip I + Q 67%, w16 DPCH, CCDF = 9.0:1)
IMD vs. Output Power
-15
VDD = 28 V, IDQ = 320 mA
-25 f1 = 2169.5, f2 = 2170.5 MHz
3rd Order
-35
5th
-45
-55 7th
-65
0
6 12 18 24
Output Power ( Watts-PEP)
30
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Symbol
V(BR)DSS
IDSS
VGS(th)
RDS(on)
Min
65
3.0
Typ
0.3
Max
1.0
5.0
Units
Volts
µA
Volts
Ohms
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
+20
200
109
0.625
40 to +150
1.60
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
IM3 vs. Output Power at Various Biases
0
-10
VDD = 28 V
f1 = 2169.5, f2 = 2170.5
-20
-30
-40
-50
-60
-70
0
350 mA
320 mA
300 mA
280 mA
6 12 18 24
Output Power (Watts-PEP)
30
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