Hi-Com Triac. BTA410Y-600CT Datasheet

BTA410Y-600CT Triac. Datasheet pdf. Equivalent

Part BTA410Y-600CT
Description 3Q Hi-Com Triac
Feature TO-220AB BTA410Y-600CT 3Q Hi-Com Triac 9 June 2014 Product data sheet 1. General description Plan.
Manufacture NXP
Datasheet
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BTA410Y-600CT
BTA410Y-600CT
3Q Hi-Com Triac
9 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)
internally insulated plastic package. This "series CT" triac will commutate the full RMS
current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a
snubber. It is used in applications where "high junction operating temperature capability"
is required.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High Tj(max)
Isolated mounting base with 2500 V (RMS) isolation
Less sensitive gate for high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Electronic thermostats (heating and cooling)
Motor Controls
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
VDRM
ITSM
Tj
IT(RMS)
Quick reference data
Parameter
Conditions
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
junction temperature
RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
Min Typ Max Unit
- - 600 V
- - 100 A
- - 150 °C
- - 10 A
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BTA410Y-600CT
NXP Semiconductors
BTA410Y-600CT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
2-
2-
2-
35 mA
35 mA
35 mA
500 - - V/µs
8 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
123
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA410Y-600CT
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
BTA410Y-600CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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