Single P-Channel MOSFET
MDS3653– Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ
MDS3653
Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ
Gener...
Description
MDS3653– Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ
MDS3653
Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ
General Description
The MDS3653 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance.
This device is suited for Power Management and load switching applications common in Note PC Battery.
Features
VDS = -30V
ID = -13A @VGS = -10V
RDS(ON)
< 7mΩ @VGS = -10V
< 12mΩ @VGS = -4V
Applications
Load Switch General purpose applications Smart Module for Note PC Battery
D
8(D)7(D)6(D)5(D)
1(S) 2(S)3(S) 4(G)
G S
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range
(Note 1) (Note 2)
Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1)
Symbol RθJA RθJC
Rating -30 ±20 -13 -52 2.5 180
-55~150
Rating 50 25
Unit V V A A W mJ oC
Unit oC/W
Jul. 2021. Version 1.2
1
Magnachip Semiconductor Ltd.
MDS3653– Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ
Ordering Information
Part Number MDS3653URH
Temp. Range -55~150oC
Package SOIC-8
Packing Tape & Reel
RoHS Status Halogen Free
Electrical Characteristics (Ta = 25oC unless otherwise noted)
Characteristics Static Characteristics
Drain-Source Breakdown Voltage Gate Thres...
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