Dual Transistor. LMBT3946DW1T3G Datasheet

LMBT3946DW1T3G Transistor. Datasheet pdf. Equivalent

Part LMBT3946DW1T3G
Description Dual Transistor
Feature LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin–off.
Manufacture Leshan Radio Company
Datasheet
Download LMBT3946DW1T3G Datasheet

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LMBT3946DW1T3G Datasheet
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LMBT3946DW1T3G Datasheet
Recommendation Recommendation Datasheet LMBT3946DW1T3G Datasheet





LMBT3946DW1T3G
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
The LMBT3904DW1T1G device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices
in one package , this device is ideal for low–power surface mount
applications where board space is at a premium.
LMBT3904DW1T1G
S-LMBT3904DW1T1G
FEATURES
1)Low VCE(sat), 0.4 V
2)Simplifies Circuit Design
3)Reduces Board Space
4)Reduces Component Count
5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
6)hFE, 100–300
7)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
8) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SC-88
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3904DW1T1G
MA
3000/Tape&Reel
LMBT3946DW1T3G
MA
10000/Tape&Reel
MAXIMUM RATINGS(Ta = 25)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient(Note 1)
Junction and Storage temperature
PD 150
RΘJA
TJ,Tstg
833
−55+150
mW
/W
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
June,2015
Rev.B 1/6



LMBT3946DW1T3G
LESHAN RADIO COMPANY, LTD.
LMBT3904DW1T1GS-LMBT3904DW1T1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
OFF CHARACTERISTICS
Characteristic
Symbol
Collector–Emitter Breakdown Voltage
VBR(CEO)
(IC = 1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
VBR(CBO)
(I C = 10 μAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 μAdc, I C = 0)
VBR(EBO)
Collector Cutoff Current
ICEX
( V CE = 30 Vdc, V EB = 3.0Vdc)
Base Cutoff Current
IBL
(V CE = 30 Vdc, V EB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(I C = 0.1 mAdc, V CE = 1.0 Vdc)
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 50 mAdc, V CE = 1.0 Vdc)
(I C = 100 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 50mAdc, I B = 5.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 50mAdc, I B = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Characteristic
Current–Gain — Bandwidth Product
(I C = 10mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Symbol
fT
Cobo
Cibo
hie
Voltage Feedback Ratio
hre
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE=5V, IC=100μA, RS=1.0k , f =1.0kHz)
hfe
hoe
NF
2. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.
Min.
40
60
6
40
70
100
60
30
0.65
Min.
300
1
0.5
100
1
Typ. Max.
––
––
––
50
50
––
––
300
––
––
0.2
0.3
0.85
0.95
Typ. Max.
––
4
8
10
8
400
40
5
Unit
V
V
V
nA
nA
V
V
Unit
MHz
pF
pF
k
X 10 –4
μmhos
dB
June,2015
Rev.B 2/6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)