LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon
The LMBT3906DW1T1G device is a spin–off of our po...
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor
Transistors
PNP Silicon
The LMBT3906DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium.
●FEATURES 1)hFE, 100–300 2)Low VCE(sat),≦0.4 V 3)Simplifies Circuit Design 4)Reduces Board Space 5)Reduces Component Count 6)We declare that the material of product compliant with
RoHS requirements and Halogen Free. 7)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3906DW1T1G S-LMBT3906DW1T1G
65 4
1 2 3
SOT-363
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3906DW1T1G
A2 3000/Tape&Reel
LMBT3906DW1T3G
A2 10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
VCBO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
Limits –40 –40 –5 –200
Unit Vdc Vdc Vdc mAdc
●THERMAL CHARACTERISTICS
Total Device Dissipation,
PD 150 mW
(Note 1) @ TA = 25°C
Thermal Resistance, Junction–to–Ambient
RΘJA
833 ℃/W
Junction and Storage temperature
TJ,Tstg −55∼+150
℃
1. Device mounted on FR4 glass epoxy printed circuit board using th...