Dual Transistor. LMBT2222ADW1T1G Datasheet

LMBT2222ADW1T1G Transistor. Datasheet pdf. Equivalent

Part LMBT2222ADW1T1G
Description Dual Transistor
Feature LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon We declare that material .
Manufacture Leshan Radio Company
Datasheet
Download LMBT2222ADW1T1G Datasheet

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LMBT2222ADW1T1G Datasheet
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LMBT2222ADW1T1G
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Silicon
We declare that material of product compliance
with ROHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
ORDERING INFORMATION
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
Max
150
Unit
mW
RqJA
833 °C/W
TJ, Tstg –55 to +150 °C
Device
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
LMBT2222ADW1T3G
S-LMBT2222ADW1T3G
Marking
XX
XX
Shipping
3000/Tape & Reel
10000/Tape & Reel
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
6
5
4
1
2
3
SC-88
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
Rev.O 1/7



LMBT2222ADW1T1G
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 2)
Collector–Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
IBL
40
75
6.0
Max Unit
– Vdc
– Vdc
– Vdc
10 nAdc
mAdc
0.01
10
100 nAdc
20 nAdc
hFE
35 –
50 –
75 –
35 –
100 300
50 –
40 –
VCE(sat)
Vdc
0.3
1.0
VBE(sat)
Vdc
0.6 1.2
– 2.0
Rev.O 2/7





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