LMBT3946DW1T3G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Silicon The LMBT3946DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium. LMBT3946DW1T1G S-LMBT3946DW1T1G ●FEATURES 1)Low VCE(sat), ≤ 0.4 V 2)Simplifies Circuit Design 3)Reduces Board Space 4)Reduces Component Count 5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 6)hFE, 100–300 7)We declare that the material of product compliant with RoHS requirements and Halogen Free. 8)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SC-88 ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3946DW1T1G LMBT3946DW1T3G 46 46 3000/Tape&Reel 10000/Tape&Reel Q1:PNP Q2:NPN ●MAXIMUM RATINGS(Ta = 25℃)(NPN) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous ●MAXIMUM RATINGS(Ta = 25℃)(PNP) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Symbo...