Small Signal MOSFET
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
Silicon N-Channel
zFeatures 1) Low on-resistance. 2) Fast switching spee...
Description
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
Silicon N-Channel
zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available.
LRK7002WT1G
3
1 2
SOT-323
zDevice Marking and Ordering Information
Device LRK7002WT1G LRK7002WT3G
Marking
6CC 6C
Shipping 3000/Tape&Reel 10000/Tape&Reel
z$EVROXWHPD[LPXPUDWLQJV7D °&
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous Pulsed
ID IDP∗1
Continuous Drain reverse current
Pulsed
Total power dissipation
IDR IDRP∗1 PD∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 1×0.75×0.062 inch glass epoxy board.
Limits 60 ±20 115 0.8 115 0.8 225 150
−55~+150
Unit V V mA A mA A
mW °C °C
N - Channel 3
1 2
1/4
LESHAN RADIO COMPANY, LTD.
LRK7002WT1G
z(OHFWULFDOFKDUDFWHULVWLFV7D °&
Parameter
Symbol Min.
Gate-source leakage current
IGSS
−
Drain-source breakdown voltage V (BR) DSS 60
Zero gate voltage drain current
IDSS
−
Gate threshold voltage
VGS (th)
1
Drain-source on-state resistance RDS (on)∗
− −
Forward transfer admittance
l Yfs l∗
80
Input capacitance
Ciss −
Output capacitance
Coss
−
Reverse transfer capacitance
Crss
−
Turn-on delay time Turn-off delay time
td (on)∗ td (off)∗
− −
∗ PW≤300µs, Duty cycle≤1%
Typ. − − −
1.85 − − − 25 10 3.0 12 20
Max. ±10
− 1 2.5 7.5 7.5 − 50 25 5.0 20 30
Un...
Similar Datasheet