LRK7002WT3G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET Silicon N-Channel zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. LRK7002WT1G 3 1 2 SOT-323 zDevice Marking and Ordering Information Device LRK7002WT1G LRK7002WT3G Marking 6CC 6C Shipping 3000/Tape&Reel 10000/Tape&Reel z$EVROXWHPD[LPXPUDWLQJV7D °& Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed ID IDP∗1 Continuous Drain reverse current Pulsed Total power dissipation IDR IDRP∗1 PD∗2 Channel temperature Tch Storage temperature Tstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 1×0.75×0.062 inch glass epoxy board. Limits 60 ±20 115 0.8 115 0.8 225 150 −55~+150 Unit V V mA A mA A mW °C °C N - Channel 3 1 2 1/4 LESHAN RADIO COMPANY, LTD. LRK7002WT1G z(OHFWULFDOFKDUDFWHULVWLFV7D °& Parameter Symbol Min. Gate-source leakage current IGSS − Drain-source breakdown voltage V (BR) DSS 60 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) 1 Drain-source on-state resistance RDS (on)∗ − − Forward transfer admittance l Yfs l∗ 80 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance Crss − Turn-on delay time Turn-off delay time td (on)∗ td (off)∗ − − ∗ PW≤300µs, Duty cycle≤1% Typ. − − − 1.85 − − − 25 10 3.0 12 20 Max. ±10 − 1 2.5 7.5 7.5 − 50 25 5.0 20 30 Un...